Compensation in LPLEC GaAs Single Crystals

Ko, Kyung Hyun; 고경현

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P-ISSN1225-0163
E-ISSN2288-8985
SCOPUS, ESCI, KCI

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P-ISSN 1225-0163
E-ISSN 2288-8985

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Vol.5, No.2

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Compensation in LPLEC GaAs Single Crystals

Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985

1992, v.5 no.2, pp.213-216

Ko, Kyung Hyun

Ko, K. H. (1992). Compensation in LPLEC GaAs Single Crystals. , 5(2), 213-216.

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Abstract

Semiinsulating GaAs crystals employing LPLEC technique should be grown from the Ga-rich melt due to a very low incorporation of unintentional impurities such as carbon (<$10^{15}cm^{-3}$). High resisitivity of this material can be derived from the balanced compensation among not only EL2 deep donors and carbon acceptors but also H1 double charge native acceptors(Ev + 77meV, Ev + 200 meV) and H2 native acceptors(Ev + 68 meV). Considering of the complicated compensation mechanism using statistical calculation of the electron occupancy of each level, SI GaAs crystal with low impurity contents(<$10^{15}cm^{-3}$) can be successfully obtained by maintaining the melt composition around 0.45 As mole fraction.