Effect of NaBH4 and HCI on signal intensity of As,Se,Ge with on-line hydride generation system and E-O-V ICP-AES

남상호; 한성심

오늘 하루 그만보기

P-ISSN1225-0163
E-ISSN2288-8985
SCOPUS, ESCI, KCI

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P-ISSN 1225-0163
E-ISSN 2288-8985

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Vol.15, No.5

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Effect of NaBH4 and HCI on signal intensity of As,Se,Ge with on-line hydride generation system and E-O-V ICP-AES

Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985

2002, v.15 no.5, pp.439-444

& (2002). Effect of NaBH4 and HCI on signal intensity of As,Se,Ge with on-line hydride generation system and E-O-V ICP-AES. , 15(5), 439-444.

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Abstract

DE-O-V ICP-AES has been studied for the analytical characteristics of As, Se, and Ge with PN, USN and HG. Effect of $NaBH_4$ and HCl on the signal intensity of As, Se and Ge with HG and E-O-V ICP-AES were closely investigated. The sensitivities of As, Se and Ge with HG were much greater than those with PN and USN. Accordingly, the detection limits of the elements with HG were lower by a factor of 100 and 10 than PN and USN, respectively.