Analysis of Trace Trichlorosilane in High Purity Silicon Tetrachloride by Near-IR Spectroscopy

박찬조; 이석근

오늘 하루 그만보기

P-ISSN1225-0163
E-ISSN2288-8985
SCOPUS, ESCI, KCI

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P-ISSN 1225-0163
E-ISSN 2288-8985

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Vol.15, No.1

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Analysis of Trace Trichlorosilane in High Purity Silicon Tetrachloride by Near-IR Spectroscopy

Analytical Science and Technology / Analytical Science and Technology, (P)1225-0163; (E)2288-8985

2002, v.15 no.1, pp.13-90

& (2002). Analysis of Trace Trichlorosilane in High Purity Silicon Tetrachloride by Near-IR Spectroscopy. , 15(1), 13-90.

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Abstract

The content of $SiHCl_3$ as a trace impurity in $SiCl_4$ was analyzed by Near IR spectrophotometer with optical fiber. The strong absorption bands of $5345{\sim}5116cm^{-1}$ and $4848{\sim}4349cm^{-1}$ were used for analysis of $SiHCl_3$, and the detection limit of impurity $SiCl_3$ was appeared to be 0.005 ％ in the spectrum. The quantitative analysis by Near IR spectrophotometry showed the analytical possibility of trace impurity in $SiCl_4$ without sample pre-treatment not only in the laboratory but also in the field.